A high electron mobility transistor (HEMT) controls large currents by applying
a small voltage to a thin sheet of electrons. The density and mobility of the
electrons in the sheet are critical for the operation of the HEMT. HEMTs
consisting of AlGaN/GaN/Si are being studied because they promise better
performance at higher powers, temperatures, and frequencies than conventional
silicon HEMTs can achieve. In one study, the Hall effect was used to measure
the density of electrons in one of these new HEMTs. When a current of \(10.0
\mu\) A flows through the length of the electron sheet, which is \(1.00
\mathrm{~mm}\) long, \(0.300 \mathrm{~mm}\) wide, and \(10.0 \mathrm{nm}\) thick, a
magnetic field of \(1.00 \mathrm{~T}\) perpendicular to the sheet produces a
voltage of \(0.680 \mathrm{mV}\) across the width of the sheet. What is the
density of electrons in the sheet?