Chapter 10: Q16CQ (page 467)
Why does the small current flowing through a reverse biased diode depends much more strongly on temperature than on the applied (reverse) voltage?
The number of minority carriers depends less on the reverse voltage.
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Question: The interatomic potential energy in a diatomic molecule (Figure 10.16) has many features: a minimum energy, an equilibrium separation a curvature and so on. (a) Upon what features do rotational energy levels depend? (b) Upon what features do the vibration levels depend?
Question: The magnetic field at the surface of a long wire radius R and carrying a current I is . How large acurrent could a 0.1 mm diameter niobium wire carry without exceeding its 0.2 T critical field?
Question: - (a) Compare equation (10-11) evaluated at room temperature for a silicon band gap of 1.1 eV and for a typical donor-state/conduction band gap of 0.05 eV.
(b) Assuming only one impurity atom for every 10ยณ silicon atoms, do your results suggest that majority carriers, bumped up from donor levels. should outnumber minority carriers created by thermal excitation across the whole 1.1 eV gap? (The calculation ignores the difference in density of states between donor levels and bands, which actually strengthens the argument.)
Question: From the qualitative shapes of the interatomic potential energies in Fig. 10.21, would you expect the vibrational level in the excited electronic state to be spaced the same. Farther apart, or closer together than those in the lower energy electronic state? Explain what about the rotational levels?
Assuming an interatomic spacing of 0.15 nm, obtain a rough value for the width (in eV) of the band in a one-dimensional crystal.
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