Heat treatment is common in processing of semiconductor material. A 200 -mm-
diameter silicon wafer with thickness of \(725 \mu \mathrm{m}\) is being heat
treated in a vacuum chamber by infrared heat. The surrounding walls of the
chamber have a uniform temperature of \(310 \mathrm{~K}\). The infrared heater
provides an incident radiation flux of \(200 \mathrm{~kW} / \mathrm{m}^{2}\) on
the upper surface of the wafer, and the emissivity and absorptivity of the
wafer surface are 0.70. Using a pyrometer, the lower surface temperature of
the wafer is measured to be \(1000 \mathrm{~K}\). Assuming there is no radiation
exchange between the lower surface of the wafer and the surroundings,
determine the upper surface temperature of the wafer. (Note: A pyrometer is a
noncontacting device that intercepts and measures thermal radiation. This
device can be used to determine the temperature of an object's surface.)