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(a) Show that the slope dP/dEof Eq. 41-6 evaluated atE=EFis -1/4kT. (b) Show that the tangent line to the curve of Fig. 41-7bevaluated atE=EFintercepts the horizontal axis atE=EF+2kT.

Short Answer

Expert verified
  1. The slope at is dP/dEatE=EFis-1/4kT.
  2. The tangent line to the curve evaluated at intercepts E=EFthe horizontal axis at E=EF+2kT.

Step by step solution

01

The given data

  • The given equations are Eq. 41-6 and Eq. 41-7b.
  • The given condition is E=EF.
02

Understanding the concept of probability

Using the probability equation from the Fermi-Dirac statistics, we can get the differential value of the occupied probability. Now, using the equation of the straight line, we can get the intercept value by considering the graph values.

Formula:

The probability of the condition that a particle will have energy E according to Fermi-Dirac statistics, PE=1eE-EF+1 (i)

03

a) Calculation of the slope value dP/dE

Differentiating the probability equation (i) with respect to energy, we get the following equation as follows:

dPdE=1eE-EF/kT+12deE-EF/kTdE=-1eE-EF/kT+121kTeE-EF/kT

Now, the above equation atE=EF gives the required slope value as follows:

dPdEE=EF=-1eE-EF/kT+121kTeEF-EF/kT

Hence, it is proved that the slope value at E=EFis -14kT.

04

b) Calculation of the tangent line to the curve

The equation of a line can be written as follows: y=mx-x0

From the above calculations, the value of the slope is found to be m=14kTat E=EF.

Thus, the intercept value atE=EF is PEory=12.

Thus, substituting these values in the equation (a), we get the equation of the tangent line to the curve as follows:

1/2=-1/4kTEF-x0x0=EF+2kT

Hence, the tangent line to the curve evaluated at interceptsE=EF the horizontal axis at E=EF+2kT.

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Most popular questions from this chapter

At 1000K, the fraction of the conduction electrons in a metal that have energies greater than the Fermi energy is equal to the area under the curve of Fig. 41-8bbeyond EF divided by the area under the entire curve. It is difficult to find these areas by direct integration. However, an approximation to this fraction at any temperature T is frac=3kT2EF.

Note that frac = 0 for T = 0 K, just as we would expect. What is this fraction for copper at (a) 300 K and (b) 1000 K? For copper EF=7.0eV. (c) Check your answers by numerical integration using Eq. 41-7.

Show that P(E), the occupancy probability in Eq. 41-6, is symmetrical about the value of the Fermi energy; that is, show that P(EF+ΔE)+P(EF-ΔE)=1.

Show that Eq. 41-9 can be written as EF=An2/3where the constant Ahas the value role="math" localid="1661507403881" 3.65×10-19m2eV.

A silicon-based MOSFET has a square gate 0.50μmon edge. The insulating silicon oxide layer that separates the gate from the p-type substrate is 0.20μmthick and has a dielectric constant of 4.5 . (a) What is the equivalent gate – substrate capacitance (treating the gate as one plate and the substrate as the other plate)? (b) Approximately how many elementary charges eappear in the gate when there is a gate – source potential difference of 1.0V ?

Pure silicon at room temperature has an electron number density in the conduction band of about 5.00×1015m-3and an equal density of holes in the valence band. Suppose that one of every 107silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, nor p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and holes in the valence band) in the doped silicon to that in pure silicon?

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