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In a particular crystal, the highest occupied band is full. The crystal is transparent to light of wavelengths longer than 295nm but opaque at shorter wavelengths. Calculate, in electron-volts, the gap between the highest occupied band and the next higher (empty) band for this material.

Short Answer

Expert verified

The gap between the highest occupied band and the next higher band for this material is 4.20eV .

Step by step solution

01

The given data

  • The crystal is transparent to the wavelengths of light larger than λwhile opaque to shorter wavelengths.
  • Wavelength of the light, λ=295nm
02

Understanding the concept of band gap energy

The valence band is fully occupied whereas the conduction band is not occupied at all. If an electron in the valence band is to absorb a photon, the energy it receives must be sufficient to excite the electron through the band gap. Photons with energies less than the gap width are not absorbed and the semiconductor is transparent to this radiation, whereas the photons with energies greater than the width gap are absorbed and the electrons jump to the conduction band. Thus, using the given wavelength in Planck's relation, we can get the band gap energy.

Formula:

Plank’s relation for energy, E=hcλ,wherehc=1240eV.nm (i)

03

Calculation of the value of the energy gap

the width of the band gap is the same as the energy of a photon associated with a wavelength of 295 nm. Thus, using the given data in equation (i), we can get the value of the energy gap as follows:

E=1240eV.nm295nm=4.20eV

Hence, the value of the energy gap is 4.20eV.

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The energy gaps Egfor the semiconductors silicon and germanium are, respectively, 1.12 and 0.67eV . Which of the following statements, if any, are true? (a) Both substances have the same number density of charge carriers at room temperature. (b) At room temperature, germanium has a greater number density of charge carriers than silicon. (c) Both substances have a greater number density of conduction electrons than holes. (d) For each substance, the number density of electrons equals that of holes.

In a simplified model of an undoped semiconductor, the actual distribution of energy states may be replaced by one in which there are NVstates in the valence band, all having the same energyEV, andNCstates in the conduction band all these states having the same energyEc. The number of electrons in the conduction band equals the number of holes in the valence band.

  1. Show that this last condition implies that Ncexp(Ec/kT)+1=Nvexp(Ev/kT)+1in whichEc=Ec-EF and Ev=-(Ev-EF).
  2. If the Fermi level is in the gap between the two bands and its distance from each band is large relative to kT then the exponentials dominate in the denominators. Under these conditions, show that EF=(Ec+Ev)2+kTIn(Nv+Nc)2and that ifNvNc , the Fermi level for the undoped semiconductor is close to the gap’s center.
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