Chapter 41: Q26P (page 1273)
At T = 300K, how far above the Fermi energy is a state for which the probability of occupation by a conduction electron is 0.10?
Short Answer
The value of the energy of the state above the Fermi energy is 9.1 .
Chapter 41: Q26P (page 1273)
At T = 300K, how far above the Fermi energy is a state for which the probability of occupation by a conduction electron is 0.10?
The value of the energy of the state above the Fermi energy is 9.1 .
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Get started for free(a) Show that the slope dP/dEof Eq. 41-6 evaluated atis . (b) Show that the tangent line to the curve of Fig. 41-7bevaluated atintercepts the horizontal axis at.
Figure 41-1ashows 14 atoms that represent the unit cell of copper. However, because each of these atoms is shared with one or more adjoining unit cells, only a fraction of each atom belongs to the unit cell shown. What is the number of atoms per unit cell for copper? (To answer, count up the fractional atoms belonging to a single unit cell.)
Show that P(E), the occupancy probability in Eq. 41-6, is symmetrical about the value of the Fermi energy; that is, show that .
Silver melts at . At the melting point, what fraction of the conduction electrons is in states with energies greater than the Fermi energy of 5.5 eV? (See Problem 21)
Pure silicon at room temperature has an electron number density in the conduction band of about and an equal density of holes in the valence band. Suppose that one of every silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, nor p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and holes in the valence band) in the doped silicon to that in pure silicon?
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