Warning: foreach() argument must be of type array|object, bool given in /var/www/html/web/app/themes/studypress-core-theme/template-parts/header/mobile-offcanvas.php on line 20

In a silicon lattice, where should you look if you want to find (a) a conduction electron, (b) a valence electron, and (c) an electron associated with the 2psubshell of the isolated silicon atom?

Short Answer

Expert verified
  1. The conduction electron in a silicon lattice is found in the conduction band.
  2. The valence electron in a silicon lattice is found in the outermost occupied shells of the atoms which is at the top of the valence band.
  3. The electron associated with the 2p subshell is found above the Fermi level and below the bottom of the conduction band.

Step by step solution

01

The given data

A silicon lattice is given.

02

Understanding the concept of band structure

Usually, the free electrons responsible for the conduction are called the conduction electrons that flow from the top of the valence band to the bottom of the conduction band. Generally, the electrons present in the valence band, absorb energy from the environment and jump to the conduction band. Now, using the band structure concept, we can get that the 2p-orbital of the silicon lattice structure is a closely packed shell with a location above the Fermi level and below the conduction band. Fermi level is at the middle of both the bands for undoped silicon.

03

a) Calculation of the location of conduction electron

As per the concept, the conduction electrons which are responsible for the conduction of electricity are present in the conduction band.

04

b) Calculation of the location of valence electron

the energy band present just below the conduction band is known as a valence band.

The electrons present in the highest occupied level of the band are called valence electrons.

05

c) Calculation of the location of the 2p electron  

Using the concept of the band structure of the silicon lattice, we can see that the band structure is composed of closely packed lines. This also shows that the 2p-orbital of the silicon atom is located between the valence band and the conduction band that is more close to the conduction band.

Hence, the electrons present in 2p-orbital is found between the Fermi level and the bottom of the conduction band.

Unlock Step-by-Step Solutions & Ace Your Exams!

  • Full Textbook Solutions

    Get detailed explanations and key concepts

  • Unlimited Al creation

    Al flashcards, explanations, exams and more...

  • Ads-free access

    To over 500 millions flashcards

  • Money-back guarantee

    We refund you if you fail your exam.

Over 30 million students worldwide already upgrade their learning with Vaia!

One App. One Place for Learning.

All the tools & learning materials you need for study success - in one app.

Get started for free

Most popular questions from this chapter

In Eq. 41-6 let, E-EF=โˆ†E=1.00eV. (a) At what temperature does the result of using this equation differ by 1% from the result of using the classical Boltzmann equation P(E)=e-โˆ†E/kT(which is Eq. 41-1 with two changes in notation)? (b) At what temperature do the results from these two equations differ by 10%?

Show that the probability P(E) that an energy level having energy Eis not occupied isP(E)=1e-โˆ†EIkT+1whereโˆ†E=E-EFwhere .

The Fermi energy for silver is5.5eV. At T=0ยฐC, what are the probabilities that states with the following energies are occupied: (a)4.4eV, (b)5.4eV, (c)5.5eV, (d)5.6eV, and (e)6.4eV? (f) At what temperature is the probability 0.16 that a state with energy E = 5.6eV is occupied?

A silicon sample is doped with atoms having donor states 0.110eV below the bottom of the conduction band. (The energy gap in silicon is 1.11eV ) If each of these donor states is occupied with a probability of 5.00ร—10-5at T=300K, (a) is the Fermi level above or below the top of the silicon valence band and (b) how far above or below? (c) What then is the probability that a state at the bottom of the silicon conduction band is occupied?

The occupancy probability function (Eq. 41-6) can be applied to semiconductors as well as to metals. In semiconductors the Fermi energy is close to the midpoint of the gap between the valence band and the conduction band. For germanium, the gap width is 0.67eV. What is the probability that (a) a state at the bottom of the conduction band is occupied and (b) a state at the top of the valence band is not occupied? Assume that T = 290K. (Note:In a pure semiconductor, the Fermi energy lies symmetrically between the population of conduction electrons and the population of holes and thus is at the center of the gap. There need not be an available state at the location of the Fermi energy.)

See all solutions

Recommended explanations on Physics Textbooks

View all explanations

What do you think about this solution?

We value your feedback to improve our textbook solutions.

Study anywhere. Anytime. Across all devices.

Sign-up for free