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Consider a system consisting of a single impurity atom/ion in a semiconductor. Suppose that the impurity atom has one "extra" electron compared to the neighboring atoms, as would a phosphorus atom occupying a lattice site in a silicon crystal. The extra electron is then easily removed, leaving behind a positively charged ion. The ionized electron is called a conduction electron, because it is free to move through the material; the impurity atom is called a donor, because it can "donate" a conduction electron. This system is analogous to the hydrogen atom considered in the previous two problems except that the ionization energy is much less, mainly due to the screening of the ionic charge by the dielectric behavior of the medium.

Short Answer

Expert verified

The mathematical expression for Gibb's Factor is,

Step by step solution

01

mathematical expression

Gibb's Factor =exp-1kTE(s-ฮผN(s))......(1)=exp-1kT(E(s)-ฮผN(s)).....(1)

Here, kis the Boltmann's constant, Tis the temperature, E(s)is the energy of the state s, N(s)is the number of atoms for the state s, and ฮผis the chemical potential.

Let us consider the system to be a single donor atom, there are three possibilities:

(1)

Unoccupied state which means one ionized state with no electron: In this case, the energy of the state is equal to zero

E=0

The occupation number of atoms is equal to zero.

N=0

Substitute 0for Eand 0for Nin the equation (1) and simplify.

Gibbs factor =exp-0-ฮผ(0)kT

=exp(0)=1

02

Two unionized state (with one electron present either spin-up/spin-down):

In this case, the energy of the state is equal to -I

E=-I

Here, Iis the ionization energy.

The occupation number of atoms is equal to 1.

N=1

Substitute 1for Eand 1for Nin the equation (1) and simplify.

Gibbsfactor=exp-(-I-ฮผ)kT=expI+ฮผkT

Since the electron has two independent state. So the degeneracy is 2, then

Gibbs factor =2expI+ฮผkT

The grand partition function is sum of the Gibbs factors.

Z=1+2expI+ฮผkT

03

The probability that the donor atom is ionized is

Pionized=1Z

Substitute 1+2expI+ฮผkTfor Z.

Pionized=11+2expI+ฮผkT

Hence, the probability that the donor atom is ionized is11+2expI+ฮผkT

04

If the conduction electrons behave like the ideal gas, then every conduction electrons has two spin states. Hence, the sum over all relevant state is as follows:

(b)

Zint=2

Use equation 7.10 and then the expression for chemical potential is as follows:

ฮผ=-kTVZintNcvQ

Here, Vis the total volume, Zintis the sum over all relevant internal states, Ncis the number of the conduction electrons, and vQis the quantum volume,

Substitute 2for Zint.

ฮผ=-kTln2VNcvQ=kTlnNcvQ2V

Hence, the chemical potential iskTlnNcvQ2V

05

If every conduction electron comes from an ionized donor, the probability that thee donor atom as follows:

(c)

Pionized=NcNd

Here Ncis the number of conduction electrons, Ndis the number of donor atoms.

Rearrange the equation ฮผ=kTlnNcvQ2Vfor NcvQ2V.

ฮผ=kTlnNcvQ2V

lnNcvQ2V=ฮผkT

expฮผkT=NcvQ2V

Substitute 11+2expI+ฮผkTfor Pionizedin the equation role="math" Pionized=NcNdand solve for NcNd.

NcNd=11+2expI+ฮผkT=11+2expฮผkTexpIkT

Substitute NcvQ2Vfor expฮผkT

NcNd=11+2NcvQ2VexpIkT=11+NcvQ2VexpIkT

06

Let us consider the below equations:

x=NcNd,y=NdvQVexpIkTand then the equation

NcNd=11+NcvQVexpIkTbecomes as follows:

x=11+xyx2y+x-1=0

Solve the above quadratic equation.

x=-1ยฑ1+4y2ยทy

Substitute NcNdfor x,NdvQVexpIkTfor y.

NcNd=ยฑ-11+4NdvQVexpIkT2ยทNdvQVexpIkTNc=ยฑV2vQexpIkT1+4NdvQVexpIkT-1

The number of conduction electrons always a positive number. Hence, the number of donor atoms is as follows:

Nc=V2vQexpIkT1+4NdvQVexpIkT-1

07

The expression for Quantum volume is 

(d) Quantum volume vQ=h2ฯ€mkT3

Substitute 6.625ร—10-34J.sfor h,1.66ร—10-27Kgfor m, and 1.381ร—10-23JK-1for k.

vQ=6.625ร—10-34J.s(2ฯ€)(32)(1.66ร—10-27Kg)(i.381ร—10-23JK-1)T3=2.938ร—10-29(T)32

For the phosphorous in silicon, the ionization energy is as follows:

I=0.044eV1.6ร—10-19J1.0eV=0.0704ร—10-19J

Substitute 0.704ร—10-19Jfor I,1.381ร—10-23JK-1for kin the above equation we get

IkT=0.0704ร—10-19J(1.381ร—10-23J.K-1)T=509.775T

Simplify the equationx=-1ยฑ1+4y2.yx=ยฑ-1+1+4y2y=12y-1+1+4y2+(4y)21212-12!=12y2y-42y24.2!(neglecthigherterms)x=(1-2y)

08

The number of donors is,

Nd=1017Patoms/cc=1017ร—106Patoms.Cubicmeter=1023Patoms.Cubicmeter

Substitute NcNdfor x,NdvQVexpIkTfor y,3.084ร—10-10Tfor vQin the equation x=(1-2y)and simplify.

NcNd=1-2ร—NdVexpIkT=ยฑ1-2ร—1023ร—2.938ร—10-29(T)32ร—exp2ร—509.775T=ยฑ1-5.876ร—10-6(T)32exp1019.55T=6.168ร—10-6(T)32exp1019.55T-1

09

The following graph shows fraction of ionized donors as a function of temperature.

On the axis, one unit is equal to 100K

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Most popular questions from this chapter

In analogy with the previous problem, consider a system of identical spinโ€0bosonstrapped in a region where the energy levels are evenly spaced. Assume that Nis a large number, and again let qbe the number of energy units.

(a) Draw diagrams representing all allowed system states from q=0up to q=6.Instead of using dots as in the previous problem, use numbers to indicate the number of bosons occupying each level.

(b) Compute the occupancy of each energy level, for q=6. Draw a graph of the occupancy as a function of the energy at each level.

(c) Estimate values of ฮผand Tthat you would have to plug into the Bose-Einstein distribution to best fit the graph of part(b).

(d) As in part (d) of the previous problem, draw a graph of entropy vs energy and estimate the temperature at q=6from this graph.

Evaluate the integrand in equation 7.112as a power series in x, keeping terms through x4โ€ข Then carry out the integral to find a more accurate expression for the energy in the high-temperature limit. Differentiate this expression to obtain the heat capacity, and use the result to estimate the percent deviation of Cvfrom3NkatT=TDandT=2TD.

The tungsten filament of an incandescent light bulb has a temperature of approximately 3000K. The emissivity of tungsten is approximately 13, and you may assume that it is independent of wavelength.

(a) If the bulb gives off a total of 100watts, what is the surface area of its filament in square millimetres?

(b) At what value of the photon energy does the peak in the bulb's spectrum occur? What is the wavelength corresponding to this photon energy?

(c) Sketch (or use a computer to plot) the spectrum of light given off by the filament. Indicate the region on the graph that corresponds to visible wavelengths, between400and700nm.

(d) Calculate the fraction of the bulb's energy that comes out as visible light. (Do the integral numerically on a calculator or computer.) Check your result qualitatively from the graph of part (c).

( e) To increase the efficiency of an incandescent bulb, would you want to raise or lower the temperature? (Some incandescent bulbs do attain slightly higher efficiency by using a different temperature.)

(f) Estimate the maximum possible efficiency (i.e., fraction of energy in the visible spectrum) of an incandescent bulb, and the corresponding filament temperature. Neglect the fact that tungsten melts at 3695K.

The heat capacity of liquid H4ebelow 0.6Kis proportional to T3, with the measured valueCV/Nk=(T/4.67K)3. This behavior suggests that the dominant excitations at low temperature are long-wavelength photons. The only important difference between photons in a liquid and photons in a solid is that a liquid cannot transmit transversely polarized waves-sound waves must be longitudinal. The speed of sound in liquid He4is 238m/s, and the density is 0.145g/cm3. From these numbers, calculate the photon contribution to the heat capacity ofHe4in the low-temperature limit, and compare to the measured value.

The planet Venus is different from the earth in several respects. First, it is only 70% as far from the sun. Second, its thick clouds reflect 77%of all incident sunlight. Finally, its atmosphere is much more opaque to infrared light.

(a) Calculate the solar constant at the location of Venus, and estimate what the average surface temperature of Venus would be if it had no atmosphere and did not reflect any sunlight.

(b) Estimate the surface temperature again, taking the reflectivity of the clouds into account.

(c) The opaqueness of Venus's atmosphere at infrared wavelengths is roughly 70times that of earth's atmosphere. You can therefore model the atmosphere of Venus as 70successive "blankets" of the type considered in the text, with each blanket at a different equilibrium temperature. Use this model to estimate the surface temperature of Venus. (Hint: The temperature of the top layer is what you found in part (b). The next layer down is warmer by a factor of 21/4. The next layer down is warmer by a smaller factor. Keep working your way down until you see the pattern.)

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