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For a system of fermions at room temperature, compute the probability of a single-particle state being occupied if its energy is

(a) 1eVless than μ

(b) 0.01eVless than μ

(c) equal to μ

(d) 0.01eVgreater than μ

(e) 1eVgreater thanμ

Short Answer

Expert verified

According to the Fermi-Dirac distribution, the probability of a state being occupied is given below:

nFD=1e(ε-μ)kT+1

Here, nFDis the Fermi-Dirac distribution, εis the energy, μis the chemical potential, kis the Boltzmann constant, and Tis the absolute temperature.

Formula to energy for the occupied state is given below:

ε-μ=x

Here xis the energy of the state.

Step by step solution

01

(a) Calculate the energy for the occupied state 1 eV less than than μ as follows:

ε-μ=x

Substitute -1eVfor xin the equation ε-μ=x.

ε=μ-1eVε-μ=-1eV

The room temperature in kelvins is,

T=27oC=(27+273)K=300K

Calculate the probability of a state being occupied state 1eVless than μas follows:

nFD=1e(ε-μ)kT+1

Substitute -1eVfor (ε-μ),8.617×10-5eV/Kfor k, and 300Kfor Tin the above equation.

nFD=1e-1eV(8.617×10-3eV/K)(300K)+1=0.9999nFD1.0

Therefore, the probability of a state being occupied state1eVless thanμisnFD1.0

02

(b) Calculate the energy for the occupied state 0.01 eV less than μ as follows:

ε-μ=x

Substitute -0.01eVfor xin the equation ε-μ=x.

ε=μ-0.01eVε-μ=-0.01eV

The room temperature in kelvins is,

T=27oC=(27+273)K=300K

Calculate the probability of a state being occupied state 0.01eVless than μas follows:

nFD=1e(ε-μ)kT+1

Substitute -0.01eVfor ε-μ, 8.617×10-5eV/Kfor k, and 300Kfor Tin the above equation.

nFD=1e-0.01eV(8.617×10-5eV/K)(300K)+1nFD==0.5955

Therefore, the probability of a state being occupied state0.01eVless thanμisnFD=0.5955

03

(c) Calculate the energy for the occupied state energy is equal to μ as follows:

ε-μ=x

Substitute 0eVfor xin the equation ε-μ=x.

ε=μ-0

The room temperature in kelvins is,

T=27oC=(27+273)K=300K

Calculate the probability of a state being occupied state equal to μas follows:

nFD=1eε-μkT+1

Substitute 0eVfor ε-μ,8.617×10-5eV/Kfor k, and 300Kfor Tin the above equation.

role="math" localid="1647055630164" nFD=1e0eV(8.617×10-5eV/K)(300K)+1nFD=0.5

Therefore, the probability of a state being occupied state equal toμisnFD=0.5

04

(d) Calculate the energy for the occupied state 0.01 eV greater than μ as follows:

ε-μ=x

Substitute 0.01eVfor xin the equation role="math" localid="1647056653513" ε-μ=x

role="math" localid="1647056689711" ε=μ+0.01eVε-μ=0.01eV

The room temperature in kelvins is,

role="math" localid="1647056731594" T=27oC=(27+273)K=300K

Calculate the probability of a state being occupied state 0.01eVless than μas follows:

role="math" nFD=1eε-μkT+1

Substitute 0.01eVfor role="math" localid="1647056852727" ε-μ,8.617×10-5eV/Kfor k, and 300Kfor Tin the above equation.

role="math" localid="1647056921933" nFD=1e0.01eV(8.617×10-5eV/K)(300K)+1nFD=0.4045

Therefore, the probability of a state being occupied state0.01eVgreater thanμisnFD=0.4045

05

(e) Calculate the energy for the occupied state 1 eV greater than μ as follows:

ε-μ=x

Substitute 1eVfor xin the equationε-μ=x

ε=μ+1eVε-μ=1eV

The room temperature in kelvins is,

T=27oC=(27+273)K=300K

Calculate the probability of a state being occupied state role="math" localid="1647056827269" 1eVless than μas follows:

nFD=1eε-μkT+1

Substitute 1eVfor ε-μ,8.617×10-5eV/Kfor k, and 300Kfor Tin the above equation.

role="math" localid="1647057000902" nFD=1e1eV(8.617×10-5eV/K)(300K)+1nFD=1.5852×10-17

Therefore, the probability of a state being occupied state 1eVgreater than μis nFD=1.5852×10-17

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Most popular questions from this chapter

For a brief time in the early universe, the temperature was hot enough to produce large numbers of electron-positron pairs. These pairs then constituted a third type of "background radiation," in addition to the photons and neutrinos (see Figure 7.21). Like neutrinos, electrons and positrons are fermions. Unlike neutrinos, electrons and positrons are known to be massive (ea.ch with the same mass), and each has two independent polarization states. During the time period of interest, the densities of electrons and positrons were approximately equal, so it is a good approximation to set the chemical potentials equal to zero as in Figure 7.21. When the temperature was greater than the electron mass times c2k, the universe was filled with three types of radiation: electrons and positrons (solid arrows); neutrinos (dashed); and photons (wavy). Bathed in this radiation were a few protons and neutrons, roughly one for every billion radiation particles. the previous problem. Recall from special relativity that the energy of a massive particle is ϵ=(pc)2+mc22.

(a) Show that the energy density of electrons and positrons at temperature Tis given by

u(T)=0x2x2+mc2/kT2ex2+mc2/kT2+1dx;whereu(T)=0x2x2+mc2/kT2ex2+mc2/kT2+1dx

(b) Show that u(T)goes to zero when kTmc2, and explain why this is a

reasonable result.

( c) Evaluate u(T)in the limit kTmc2, and compare to the result of the

the previous problem for the neutrino radiation.

(d) Use a computer to calculate and plot u(T)at intermediate temperatures.

(e) Use the method of Problem 7.46, part (d), to show that the free energy

density of the electron-positron radiation is

FV=-16π(kT)4(hc)3f(T);wheref(T)=0x2ln1+e-x2+mc2/kT2dx

Evaluate f(T)in both limits, and use a computer to calculate and plot f(T)at intermediate

temperatures.

(f) Write the entropy of the electron-positron radiation in terms of the functions

uTand f(T). Evaluate the entropy explicitly in the high-T limit.

Consider a system of five particles, inside a container where the allowed energy levels are nondegenerate and evenly spaced. For instance, the particles could be trapped in a one-dimensional harmonic oscillator potential. In this problem you will consider the allowed states for this system, depending on whether the particles are identical fermions, identical bosons, or distinguishable particles.

(a) Describe the ground state of this system, for each of these three cases.

(b) Suppose that the system has one unit of energy (above the ground state). Describe the allowed states of the system, for each of the three cases. How many possible system states are there in each case?

(c) Repeat part (b) for two units of energy and for three units of energy.

(d) Suppose that the temperature of this system is low, so that the total energy is low (though not necessarily zero). In what way will the behavior of the bosonic system differ from that of the system of distinguishable particles? Discuss.

At the surface of the sun, the temperature is approximately 5800 K.

(a) How much energy is contained in the electromagnetic radiation filling a cubic meter of space at the sun's surface?

(b) Sketch the spectrum of this radiation as a function of photon energy. Mark the region of the spectrum that corresponds to visible wavelengths, between 400 nm and 700 nm.

(c) What fraction of the energy is in the visible portion of the spectrum? (Hint: Do the integral numerically.)

Consider a system consisting of a single impurity atom/ion in a semiconductor. Suppose that the impurity atom has one "extra" electron compared to the neighboring atoms, as would a phosphorus atom occupying a lattice site in a silicon crystal. The extra electron is then easily removed, leaving behind a positively charged ion. The ionized electron is called a conduction electron, because it is free to move through the material; the impurity atom is called a donor, because it can "donate" a conduction electron. This system is analogous to the hydrogen atom considered in the previous two problems except that the ionization energy is much less, mainly due to the screening of the ionic charge by the dielectric behavior of the medium.

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(a) Calculate and plot the chemical potential as afunction of temperature, for silicon doped with 1017phosphorus atoms per cm3(as in Problem 7.5). Continue to assume that the conduction electrons can be treated as an ordinary ideal gas.

(b) Discuss whether it is legitimate to assume for this system that the conduction electrons can be treated asan ordinary ideal gas, as opposed to a Fermi gas. Give some numerical examples.

(c)Estimate the temperature at which the number of valence electrons excitedto the conduction band would become comparable to the number ofconduction electrons from donor impurities. Which source of conductionelectrons is more important at room temperature?

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