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Figure 7.37 shows the heat capacity of a Bose gas as a function of temperature. In this problem you will calculate the shape of this unusual graph.

(a) Write down an expression for the total energy of a gas of Nbosons confined to a volume V, in terms of an integral (analogous to equation 7.122).

(b) For T<Tcyou can set μ=0. Evaluate the integral numerically in this case, then differentiate the result with respect to Tto obtain the heat capacity. Compare to Figure 7.37.

(c) Explain why the heat capacity must approach 32Nkin the high- Tlimit.

(d) For T>Tcyou can evaluate the integral using the values of μcalculated in Problem 7.69. Do this to obtain the energy as a function of temperature, then numerically differentiate the result to obtain the heat capacity. Plot the heat capacity, and check that your graph agrees with Figure 7.37.

Figure 7.37. Heat capacity of an ideal Bose gas in a three-dimensional box.

Short Answer

Expert verified

(a) Total energy of gas, U=2π2πmh23/2V0ε3/2e(ε-μ)/kBT-1dε

(b) The expression for heat capacity was obtained.

(c) The reason for the heat capacity to approach32NKin the high Tlimit.

(d) The graph is plotted.

Step by step solution

01

Step 1. Given information

The energy expression for the gas that satisfy the Bose- Einstein's statistics is

U=nεneεn-μkBT-1

Here,

εn= energy of the nthparticle,

kB= Boltzmann's constant,

T= temperature.

The energy of the nthparticle is εn=εg(ε)where g(ε)is the density of states

02

Step 2. (a) To find the total energy of a gas of N bosons confined to volume V

Substitute the value of εg(ε)=εnin the equationU=nεn(eεn-μkBT-1)

U=0εg(ε)eεn-μkBT-1dε

Substituting the value of 2π2πmh23/2Vε=g(ε)

U=2π2πmh23/2V0ε3/2e(ε-μ)/kBT-1dε

Thus, the total energy of a gas of N bosons confined to a volume V= U=2π2πmh23/2V0ε3/2e(ε-μ)/kBT-1dε

03

Step 3. 

For T<Tcset μ=0and x=εkBTin the expression U=2π2πmh23/2V0ε3/2e(ε-μ)/kBT-1dε

U=2π2πmh2VkBT5/20x3/2ex-1dx

We know,

0x3/2ex-1dx=34πζ52

=1.783

so,

U=2π2πmh23/2VkBT5/2(1.783)

Specific heat at constant volume of system=

CV=UTV

=T2π2πmh23/2VkBT5/2(1.783)V

=52(1.783)2π2πmh232VkBT3/2kB

=5.0312πmh23/2VkBT3/2kB

Using the expression kBTC=0.527h22πmNV2/3

CVNkB=5.0312.612TTC3/2

=1.926TTC3/2

This expression shows the nature of slope in the figure 7.37.

For T=Tc, the constant CVNkBis,

CVNkB=1.926TCTC3/2

=1.926

04

Step 4. 

The system ought to behave like a standard substance gas with 3 degrees of freedom at the upper temperature. By the equipartition theorem, the heat capacity should be32NKB

05

Step 5.

The energy of the system =

U=2π2πmh2VkBT5/20x3/2ex-ct-1dx

=(0.432)NkBTC0x3/2ex-ct-1dx

UNkBTC=(0.432)0x3/2ex-ct-1dx

Att=TTC, the above equation is numerically equal toCVNkB.

06

Step 6.

Given below is the graph between CVNkBandTTC

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Most popular questions from this chapter

At the center of the sun, the temperature is approximately 107K and the concentration of electrons is approximately 1032 per cubic meter. Would it be (approximately) valid to treat these electrons as a "classical" ideal gas (using Boltzmann statistics), or as a degenerate Fermi gas (with T0 ), or neither?

Consider the electromagnetic radiation inside a kiln, with a volume of V= I m3 and a temperature of 1500 K.

(a) What is the total energy of this radiation?

(b) Sketch the spectrum of the radiation as a function of photon energy.

(c) What fraction of all the energy is in the visible portion of the spectrum, with wavelengths between 400 nm and 700 nm?

Consider a system consisting of a single impurity atom/ion in a semiconductor. Suppose that the impurity atom has one "extra" electron compared to the neighboring atoms, as would a phosphorus atom occupying a lattice site in a silicon crystal. The extra electron is then easily removed, leaving behind a positively charged ion. The ionized electron is called a conduction electron because it is free to move through the material; the impurity atom is called a donor, because it can "donate" a conduction electron. This system is analogous to the hydrogen atom considered in the previous two problems except that the ionization energy is much less, mainly due to the screening of the ionic charge by the dielectric behavior of the medium.

(a) Write down a formula for the probability of a single donor atom being ionized. Do not neglect the fact that the electron, if present, can have two independent spin states. Express your formula in terms of the temperature, the ionization energy I, and the chemical potential of the "gas" of ionized electrons.

(b) Assuming that the conduction electrons behave like an ordinary ideal gas (with two spin states per particle), write their chemical potential in terms of the number of conduction electrons per unit volume,NcV.

(c) Now assume that every conduction electron comes from an ionized donor atom. In this case the number of conduction electrons is equal to the number of donors that are ionized. Use this condition to derive a quadratic equation for Ncin terms of the number of donor atoms Nd, eliminatingµ. Solve for Ncusing the quadratic formula. (Hint: It's helpful to introduce some abbreviations for dimensionless quantities. Tryx=NcNd,t=kTland so on.)

(d) For phosphorus in silicon, the ionization energy is localid="1650039340485" 0.044eV. Suppose that there are 1017patoms per cubic centimeter. Using these numbers, calculate and plot the fraction of ionized donors as a function of temperature. Discuss the results.

Repeat the previous problem, taking into account the two independent spin states of the electron. Now the system has two "occupied" states, one with the electron in each spin configuration. However, the chemical potential of the electron gas is also slightly different. Show that the ratio of probabilities is the same as before: The spin degeneracy cancels out of the saha equation.

If you have a computer system that can do numerical integrals, it's not particularly difficult to evaluate μfor T>Tc.

(a) As usual when solving a problem on a computer, it's best to start by putting everything in terms dimensionless variables. So define t=T/Tc,c=μ/kTc,andx=ϵ/kTc. Express the integral that defines μ, equation N=0g(ϵ)1e(ϵ-μ)/kT-1dϵ, in terms of these variables, you should obtain the equation

2.315=0xdxe(x-c)/t-1

(b) According to given figure , the correct value of cwhen T=2Tc, is approximately -0.8. Plug in these values and check that the equation above is approximately satisfied.

(c) Now vary μ, holding Tfixed, to find the precise value of μfor T=2Tc. Repeat for values ofT/Tcranging from 1.2up to 3.0, in increments of 0.2. Plot a graph of μas a function of temperature.

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