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Problem 7.69. If you have a computer system that can do numerical integrals, it's not particularly difficult to evaluate μforT>Tc.

(a) As usual when solving a problem on a computer, it's best to start by putting everything in terms of dimensionless variables. So define t=T/Tc,c=μ/kTc,andx=ϵ/kTc. Express the integral that defines , equation 7.22, in terms of these variables. You should obtain the equation

2.315=0xdxe(x-c)/t-1

(b) According to Figure

the correct value of cwhen T=2Tcis approximately -0.8. Plug in these values and check that the equation above is approximately satisfied.

(c) Now vary μ, holding Tfixed, to find the precise value of μfor T=2Tc. Repeat for values of T/Tcranging from 1.2up to 3.0, in increments of 0.2. Plot a graph of μas a function of temperature.

Short Answer

Expert verified

(a) The equation was proved using the expression for density of states of fermi energy level Bose-Einstein condensation.

(b) The value of cis evaluated as 2.35which differs 1.6%from the accurate value.

(c) The graph is plotted as shown below.

Step by step solution

01

Step 1. Given Information

The equation for density of states of fermi energy level:
N=0g(ε)1e(ε-μ)kT-1dε (Equation-1)

For, critical temperature

kTc=nε

Here,

k= Boltzmann constant,

n=number of nearest neighboring dipole

ε=interaction energy.

Relation between fermi temperature and fermi energy

tεF=kT

Relation between chemical potential and fermi energy

μ=cεF

Substituting the values of tεF=kT,μ=cεFin Equation-1

N=0g(ε)1eε-εrur-1dε

=0g(ε)1eε-cptr-1dε

02

Step 2. (a) Solving the expression for density of state 

Substituting the values of tεF=kT,μ=cεFin Equation-1

N=0g(ε)1eε-cεFtεF-1dε

=0g(ε)1eε-cεFtεF-1dε

N=0g(ε)εFexεF-cεFtεF+1dx

N=0g(ε)εFe(x-c)t+1dx (Equation-2)

For bosons zero spin confined in a box of volume V, the function can be equated as,

N=2.6122πmh232V

Density of state =

g(ε)=2.6122πmh232Vεdε

Substituting the value of εF=xkTcanddε=kTcdx

g(ε)dε=2π2πmh232VxkTckTcdx

=2π2πmkTch232Vxdx

Substituting the value of N=2.6122πmh232V

N=02πN2.612xdxεFe(x-c)t-1

=2πN2.6120xe(x-c)t-1dx

2.315=0xe(x-c)t-1dx

Therefore, the equation is proved.

03

Step 3. (b)Checking the equation by putting values

The given mathematical function is used to evaluate the value of cwhen T=2Tc

NintegrateSqrt[x]Exp(x+0.8)2-1,{x,o,Infinity}

The value of cis evaluated as 2.35which differs 1.6% from the accurate value.

04

Step 4. (c) Plotting the graph

The integral equation we attained from part(a)

2.315=0xe(x-c)t-1dx

The following mathematical function is used to evaluate the value of cwhenT=2TcFind root2.315=NintegrateSqrt[x]Exp(x-c)2-1,{x,o,Infinity},{c,-0.8,-0.9}

This function gives the value of c=-0.820.

The following mathematical function generate a table for all values of c.

mutable=Tablet,Find root2.315=N integrateSqrt[x]Exp(x-c)2-1,{x,o,Infinity}{c,-0.1,-0.2},[1,2]{t,1.2,3,0.2}

The graph shows the chemical potential (μ) as the function of temperature.

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Most popular questions from this chapter

In the text I claimed that the universe was filled with ionised gas until its temperature cooled to about 3000 K. To see why, assume that the universe contains only photons and hydrogen atoms, with a constant ratio of 109 photons per hydrogen atom. Calculate and plot the fraction of atoms that were ionised as a function of temperature, for temperatures between 0 and 6000 K. How does the result change if the ratio of photons to atoms is 108 or 1010? (Hint: Write everything in terms of dimensionless variables such as t = kT/I, where I is the ionisation energy of hydrogen.)

The previous two problems dealt with pure semiconductors, also called intrinsic semiconductors. Useful semiconductor devices are instead made from doped semiconductors, which contain substantial numbers of impurity atoms. One example of a doped semiconductor was treated in Problem 7.5. Let us now consider that system again. (Note that in Problem 7.5 we measured all energies relative to the bottom of the conduction band, Ee. We also neglected the distinction between g0and g0c; this simplification happens to be ok for conduction electrons in silicon.)

(a) Calculate and plot the chemical potential as afunction of temperature, for silicon doped with 1017phosphorus atoms per cm3(as in Problem 7.5). Continue to assume that the conduction electrons can be treated as an ordinary ideal gas.

(b) Discuss whether it is legitimate to assume for this system that the conduction electrons can be treated asan ordinary ideal gas, as opposed to a Fermi gas. Give some numerical examples.

(c)Estimate the temperature at which the number of valence electrons excitedto the conduction band would become comparable to the number ofconduction electrons from donor impurities. Which source of conductionelectrons is more important at room temperature?

Imagine that there exists a third type of particle, which can share a single-particle state with one other particle of the same type but no more. Thus the number of these particles in any state can be 0,1 or 2 . Derive the distribution function for the average occupancy of a state by particles of this type, and plot the occupancy as a function of the state's energy, for several different temperatures.

Evaluate the integrand in equation 7.112as a power series in x, keeping terms through x4• Then carry out the integral to find a more accurate expression for the energy in the high-temperature limit. Differentiate this expression to obtain the heat capacity, and use the result to estimate the percent deviation of Cvfrom3NkatT=TDandT=2TD.

Consider a system of five particles, inside a container where the allowed energy levels are nondegenerate and evenly spaced. For instance, the particles could be trapped in a one-dimensional harmonic oscillator potential. In this problem you will consider the allowed states for this system, depending on whether the particles are identical fermions, identical bosons, or distinguishable particles.

(a) Describe the ground state of this system, for each of these three cases.

(b) Suppose that the system has one unit of energy (above the ground state). Describe the allowed states of the system, for each of the three cases. How many possible system states are there in each case?

(c) Repeat part (b) for two units of energy and for three units of energy.

(d) Suppose that the temperature of this system is low, so that the total energy is low (though not necessarily zero). In what way will the behavior of the bosonic system differ from that of the system of distinguishable particles? Discuss.

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