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Consider a two-dimensional solid, such as a stretched drumhead or a layer of mica or graphite. Find an expression (in terms of an integral) for the thermal energy of a square chunk of this material of area , and evaluate the result approximately for very low and very high temperatures. Also, find an expression for the heat capacity, and use a computer or a calculator to plot the heat capacity as a function of temperature. Assume that the material can only vibrate perpendicular to its own plane, i.e., that there is only one "polarization."

Short Answer

Expert verified

The expression for the heat capacity is CV=2NkTTD20xmaxx3exex12dxand the plot of the heat capacity as a function of temperature is

Step by step solution

01

Step 1:Given Information

We need to find an expression for the heat capacity, and use a computer or a calculator to plot the heat capacity as a function of temperature.

02

Simplify

Consider we have two-dimensional material which is simply a square chunk with area of A=L2the thermal energy equals the sum of the energies multiplied by the Planck distribution n-PLthat is:

U=nxnyϵn-Pl

note that we multiplied with a factor of 1, since we have only one mode of polarization, the Planck distribution is given by:

n-Pl=1eϵ/kT1

thus,

U=nxnyϵeϵ/kT1

the allowed wavelengths is:

λ=2Ln

therefore the allowed energies are:

ϵ=hcλ=hcn2L

therefore:

U=hc2Lnxnynehen/kT1

assume we have Natoms is the shape of the square, therefore the width of this square islocalid="1650284294248" N, Nfor a large we change the summation to an integral, that is:

localid="1650284284032" U=hc2L0Ndnx0Ndnynehcn/kT1

now we need to change this into a polar coordinates. First change the square to a quarter circle that has the same area of the square, with radius of localid="1650284300903" nmax

as shown in the following figure:

03

Simplify

To find nmaxwe set the area of the quarter circle 14πnmax2to the area of the square which is Nso we get:

N=14πnmax2nmax=4Nπ

U=hcs2L0π/2dθ0nmaxn2ehcsn/kT1dnU=π2hcs2L0nmaxn2ehcsn/kT1dn

now let,

x=hcsn2LkTdx=hcs2LkTdn

thus,

U=π2hcs2L2LkThcs30nmaxx2ex1dxU=π22Lhcs2(kT)30nmaxx2ex1dx

We need to change the limits of the integral, the lower limit will stay the same while the upper limit is:

xmax=hcsnmax2LkT

also we can write xmaxas:

xmax=TDT=hcsnmax2LkT=hcs2LkT4NπTD=hcs2Lk4NπTD2=1k2hcs2L24Nπ2Lhcs2=1kTD24Nπ

04

Simplify

substitute into (2) to get:

U=π21kTD24Nπ(kT)30xmaxx2ex1dx

U=2NkT3TD20xmaxx2ex1dx

at a very low temperature, role="math" localid="1650283166300" TTDthen xmaxsince xmax=TD/Tso we get:

U=2NkT3TD20x2ex1dx

this integral can be evaluated numerically and its value is 2.404then:

Ulow=2.4042NkT3TD2

the heat capacity at low temperature is therefore:

CV=UT=2.4046NkT2TD2CV=2.4046NkT2TD2

at high temperature limit is very small, so we can expand the exponential using the power series that is:

U=2NkT3TD20xmaxx21+x1dx

2NkT3TD20xmaxx21+x1dxU=2NkT3TD20xmaxxdxU=NkT3TD2xmax2U=NkT3TD2TDT2Uhigh=NkTCV=Nk

05

Simplify

To find the heat capacity at the intermediate temperature we take the derivative of the equation(1) with respect to the temperature, so we get:

CV=π2hcs2L0nmaxTn2ehcsn/2LkT1dnCV=π2hcs2L0nmaxhcsn2LkT2n2ehcsn/2LkTehcsn/2LkT12dnCV=π2hcs2LT21k0nmaxn3ehcsn/2LkTehcsn/2LkT12dn

now let,

x=hcsn2LkTdx=hcs2LkTdn

thus,

CV=π2hcs2LT21k2LkThcs40xmaxx3exex12dxCV=π22Lhcs2k3T20xmaxx3exex12dx

substitute with,

2Lhc2=1kTn24Nπ

to get:

CV=π21kTD24Nπk3T20xmaxx3exex12dxCV=2NkTTD20xmaxx3exex12dx

To plot this function i used the code is shown in the picture.

06

Diagram

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Most popular questions from this chapter

In a real semiconductor, the density of states at the bottom of the conduction band will differ from the model used in the previous problem by a numerical factor, which can be small or large depending on the material. Let us, therefore, write for the conduction band g(ϵ)=g0cϵ-ϵcwhere g0cis a new normalization constant that differs from g0by some fudge factor. Similarly, write gat the top of the valence band in terms of a new normalization constant g0v.

(a) Explain why, if g0vg0c, the chemical potential will now vary with temperature. When will it increase, and when will it decrease?

(b) Write down an expression for the number of conduction electrons, in terms of T,μ,candg0cSimplify this expression as much as possible, assuming ϵc-μkT.

(c) An empty state in the valence band is called a hole. In analogy to part (b), write down an expression for the number of holes, and simplify it in the limit μ-ϵvkT.

(d) Combine the results of parts (b) and (c) to find an expression for the chemical potential as a function of temperature.

(e) For silicon, g0cg0=1.09andg0vg0=0.44*.Calculate the shift inµ for silicon at room temperature.


Fill in the steps to derive equations 7.112and7.117.

At the center of the sun, the temperature is approximately 107K and the concentration of electrons is approximately 1032 per cubic meter. Would it be (approximately) valid to treat these electrons as a "classical" ideal gas (using Boltzmann statistics), or as a degenerate Fermi gas (with T0 ), or neither?

Consider any two internal states, s1 and s2, of an atom. Let s2 be the higher-energy state, so that Es2-Es1=ϵ for some positive constant. If the atom is currently in state s2, then there is a certain probability per unit time for it to spontaneously decay down to state s1, emitting a photon with energy e. This probability per unit time is called the Einstein A coefficient:

A = probability of spontaneous decay per unit time.

On the other hand, if the atom is currently in state s1 and we shine light on it with frequency f=ϵ/h, then there is a chance that it will absorb photon, jumping into state s2. The probability for this to occur is proportional not only to the amount of time elapsed but also to the intensity of the light, or more precisely, the energy density of the light per unit frequency, u(f). (This is the function which, when integrated over any frequency interval, gives the energy per unit volume within that frequency interval. For our atomic transition, all that matters is the value of u(f)atf=ϵ/h) The probability of absorbing a photon, per unit time per unit intensity, is called the Einstein B coefficient:

B=probability of absorption per unit timeu(f)

Finally, it is also possible for the atom to make a stimulated transition from s2down to s1, again with a probability that is proportional to the intensity of light at frequency f. (Stimulated emission is the fundamental mechanism of the laser: Light Amplification by Stimulated Emission of Radiation.) Thus we define a third coefficient, B, that is analogous to B:

B'=probability of stimulated emission per unit timeu(f)

As Einstein showed in 1917, knowing any one of these three coefficients is as good as knowing them all.

(a) Imagine a collection of many of these atoms, such that N1 of them are in state s1 and N2 are in state s2. Write down a formula for dN1/dt in terms of A, B, B', N1, N2, and u(f).

(b) Einstein's trick is to imagine that these atoms are bathed in thermal radiation, so that u(f) is the Planck spectral function. At equilibrium, N1and N2 should be constant in time, with their ratio given by a simple Boltzmann factor. Show, then, that the coefficients must be related by

B'=BandAB=8πhf3c3

When the attractive forces of the ions in a crystal are taken into account, the allowed electron energies are no longer given by the simple formula 7.36; instead, the allowed energies are grouped into bands, separated by gaps where there are no allowed energies. In a conductor the Fermi energy lies within one of the bands; in this section we have treated the electrons in this band as "free" particles confined to a fixed volume. In an insulator, on the other hand, the Fermi energy lies within a gap, so that at T = 0 the band below the gap is completely occupied while the band above the gap is unoccupied. Because there are no empty states close in energy to those that are occupied, the electrons are "stuck in place" and the material does not conduct electricity. A semiconductor is an insulator in which the gap is narrow enough for a few electrons to jump across it at room temperature. Figure 7 .17 shows the density of states in the vicinity of the Fermi energy for an idealized semiconductor, and defines some terminology and notation to be used in this problem.

(a) As a first approximation, let us model the density of states near the bottom of the conduction band using the same function as for a free Fermi gas, with an appropriate zero-point: g(ϵ)=g0ϵ-ϵc, where go is the same constant as in equation 7.51. Let us also model the density of states near the top

Figure 7.17. The periodic potential of a crystal lattice results in a densityof-states function consisting of "bands" (with many states) and "gaps" (with no states). For an insulator or a semiconductor, the Fermi energy lies in the middle of a gap so that at T = 0, the "valence band" is completely full while the-"conduction band" is completely empty. of the valence band as a mirror image of this function. Explain why, in this approximation, the chemical potential must always lie precisely in the middle of the gap, regardless of temperature.

(b) Normally the width of the gap is much greater than kT. Working in this limit, derive an expression for the number of conduction electrons per unit volume, in terms of the temperature and the width of the gap.

(c) For silicon near room temperature, the gap between the valence and conduction bands is approximately 1.11 eV. Roughly how many conduction electrons are there in a cubic centimeter of silicon at room temperature? How does this compare to the number of conduction electrons in a similar amount of copper?

( d) Explain why a semiconductor conducts electricity much better at higher temperatures. Back up your explanation with some numbers. (Ordinary conductors like copper, on the other hand, conduct better at low temperatures.) (e) Very roughly, how wide would the gap between the valence and conduction bands have to be in order to consider a material an insulator rather than a semiconductor?

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