Question

For the same density of impurity atoms, Zener voltage is (A) same for both Ge and Si (B) higher for Ge than for \(\mathrm{Si}\) (C) higher for silicon than for germanium (D) none of the above

Short answer

The Zener voltage (\(V_Z\)) is higher for Silicon than for Germanium when the density of impurity atoms is the same. This is because Silicon has a higher critical electric field (\(E_c\)) than Germanium, and \(V_Z\) is directly proportional to the critical electric field. Therefore, the correct answer is (C) higher for silicon than for germanium.

Step-by-step solution

Start with the formula connecting Zener voltage and impurity density

In a Zener diode, the breakdown voltage (\(V_Z\)) is related to the density of impurity atoms (\(N_d\)) and the critical electric field (\(E_c\)) through the formula: \[V_Z = E_c \times w\] where \(w\) is the depletion layer width.

Consider the relationship between the width of the depletion layer and impurity density

The depletion layer width (w) is inversely proportional to the square root of the impurity density \(N_d\) and it can be expressed as: \[w \propto \frac{1}{\sqrt{N_d}}\]

Examine the critical electric field for both Ge and Si

Germanium has a lower critical electric field than Silicon. That means: \[E_c (\text{Ge}) < E_c (\text{Si})\]

Combine the relationships to compare Zener voltages for Ge and Si

Based on the relationships in steps 1-3, the Zener voltage is inversely proportional to the square root of the impurity density, while it is directly proportional to the critical electric field. So, we can write: \[V_Z (\text{Ge}) \propto \frac{E_c (\text{Ge})}{\sqrt{N_d}}\] \[V_Z (\text{Si}) \propto \frac{E_c (\text{Si})}{\sqrt{N_d}}\] Since both diodes have the same impurity density and critical electric fields are different, we can compare their Zener voltages. From step 3, we know that \(E_c(\text{Ge}) < E_c(\text{Si})\). Therefore, we can conclude that: \[V_Z (\text{Ge}) < V_Z (\text{Si})\]

Choose the correct answer option

Based on our comparison, the Zener voltage for Germanium is smaller than that for Silicon. So, the correct answer is: (C) higher for silicon than for germanium

Key concepts

Zener Diode

A Zener diode is a specialized type of diode that allows current to flow in the reverse direction when exposed to a particular voltage, known as the Zener voltage. This feature makes it extremely useful for voltage regulation purposes.
One of the key characteristics of a Zener diode is its ability to maintain a stable voltage even when the current flowing through it varies. This property is due to the specific breakdown mechanism that occurs when the Zener voltage is reached.

• In a normal diode, this breakdown is seen as a point of failure, but in a Zener diode, it is carefully controlled.
• The Zener voltage is determined by the doping level of the semiconductor material and its critical electric field.

When designing circuits that need to maintain a consistent voltage despite changes in supply voltage or load conditions, Zener diodes are an excellent component to consider. They are built to work reliably in these reverse breakdown conditions without damage.

Critical Electric Field

The critical electric field, often denoted as \(E_c\), is a crucial factor in determining the Zener voltage of a diode. It is the electric field strength at which the diode begins to conduct in reverse, leading to a breakdown.
Both Germanium (Ge) and Silicon (Si) have different critical electric fields due to their material properties.

• Silicon has a higher critical electric field compared to Germanium.
• This means Silicon can withstand a stronger electric field before reaching the breakdown point.

In the context of a Zener diode, knowing the critical electric field helps in understanding when the diode will enter its Zener breakdown region. It explains why Silicon Zener diodes can have higher Zener voltages compared to Germanium ones with the same impurity densities.

Depletion Layer

The depletion layer in a diode is a region around the junction where mobile carriers are absent. This layer plays a crucial role in the working of a Zener diode.
When a reverse voltage is applied, this depletion layer expands, and its properties are key to controlling the breakdown voltage.

• Its width is inversely proportional to the square root of the impurity density \(N_d\).
• The depletion width alters how much potential difference is required to cause a breakdown.

This means that with higher impurity densities, the depletion layer becomes narrower, leading to a different breakdown behavior which affects the Zener voltage. Understanding how the depletion layer changes with impurity density aids in designing more precise voltage regulation circuits using Zener diodes.

Impurity Density

Impurity density, represented by \(N_d\), refers to the concentration of dopant atoms in a semiconductor material. This factor is essential for tailoring the electrical properties of a Zener diode.
By altering impurity density, manufacturers can control the breakdown characteristics of the diode.

• A higher impurity density results in a narrower depletion layer.
• This affects the Zener voltage, making it generally lower as impurity density increases.

Being able to adjust impurity density allows for precise engineering of diodes to achieve desired voltage regulation specifications. Importantly, in the Zener breakdown phenomenon, impurity density is inversely related to the breakdown voltage, a fundamental aspect when comparing the performance of different semiconductors like Ge and Si.