Chapter 38: Problem 2910
What is the resistance of \(\mathrm{P}-\mathrm{N}\) junction diode in forward biasing ? (A) zero (B) high (C) infinity (D) a few ohms
Chapter 38: Problem 2910
What is the resistance of \(\mathrm{P}-\mathrm{N}\) junction diode in forward biasing ? (A) zero (B) high (C) infinity (D) a few ohms
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Get started for freeThe number of minority carriers crossing the junction of diode depends primarily on the (A) magnitude of potential barrier (B) magnitude of the forward bias barrier. (C) rate of thermal generation of electron hole pair. (D) concentration of doping impurities.
When P-N junction diode is in forward biased condition, the flow of current is mainly due to (A) both by drift and diffusion of electrons (B) the drift of electrons (C) the diffusion of electrons (D) none of the a above
In a P-N junction, there is no appreciable current if (A) a potential difference is applied across the junction (B) it is impossible (C) P-section is a made positive and N-section negative (D) a potential difference is applied across junction making P section negative and N-section positive.
A P-N junction is said to be forward based when (A) a magnetic field is applied in the region of junction. (B) a potential difference is applied across \(\mathrm{P}\) and \(\mathrm{N}\) regions making \(\mathrm{P}\) region negative and \(\mathrm{N}\) region positive. (C) not potential difference is applied across \(\mathrm{P}\) and \(\mathrm{N}\) regions. (D) a potential difference is applied across \(\mathrm{P}\) and \(\mathrm{N}\) regions making P region positive and N region negative.
When a P-N junction diode is reverse biased (A) height of the potential barriers decreases (B) no change in the current takes place (C) electrons and holes move away from the junction deflection region. (D) electrons and holes one attracted towards each other and move towards the deflection region.
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