Chapter 19: Problem 2656
The device associated with voltage controlled capacitance is (A) Light emitting diode (B) Photo diode (C) Varactor diode (D) Zener diode
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Common base current gain of a NPN transistor is \(0.99\). The input resistance is \(1000 \Omega\) and load resistance is \(10,000 \Omega\). The voltage gain in common emitter mode is (A) 9900 (B) 99000 (C) 99 (D) \(\overline{990}\)
When a P-type semi-conductor is heated: (A) number of holes increases while that of electrons decreases (B) number of electron increases while that of hole decreases (C) number of electrons and holes remains same (D) number of electrons and holes increases equally
The number of holes and electrons in an intrinsic conductors are \(\mathrm{x}\)
and \(\mathrm{y}\) respectively at room temperature. Which of the following
options are true?
(A) \(x>y\)
(B) \(\mathrm{y}>\mathrm{x}\)
(C) \(x=y\)
(D) \(x<
A light emitting diode has a voltage drop of \(2 \mathrm{~V}\) across it when \(10 \mathrm{~mA}\) current is passed. If this \(\mathrm{LED}\) is to be operated with \(6 \mathrm{~V}\) battery the value of limiting resistor would be (A) \(400 \Omega\) (B) \(4000 \Omega\) (C) \(40 \mathrm{k} \Omega\) (D) \(300 \Omega\)
In a P-type silicon, which of the following statement is true? (A) Electrons are majority charge carries and trivalent atoms are the dopants (B) Electrons are minority charge carries and pentavalent atoms are dopants (C) Holes are minority charge carries and pentavalent atoms are dopants (D) Holes are majority charge carries and trivalent atoms are dopants
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