Chapter 19: Problem 2647
In VLSI circuits more than gates are contained. (A) 1000 (B) 100 (C) 10 (D) 500
Chapter 19: Problem 2647
In VLSI circuits more than gates are contained. (A) 1000 (B) 100 (C) 10 (D) 500
All the tools & learning materials you need for study success - in one app.
Get started for freeWhen source voltage increases in a zener diode, which of these current remains approximately constant? (A) Series current (B) Zener current (C) Load current (D) Total current
A full wave rectifier is operating at \(50 \mathrm{~Hz}, 220 \mathrm{~V}\) the fundamental frequency of ripple will be (A) \(50 \mathrm{~Hz}\) (B) \(75 \mathrm{~Hz}\) (C) \(110 \mathrm{~Hz}\) (D) \(100 \mathrm{~Hz}\)
A n-p-n transistor is used in common emitter made in an amplifier it. A change of \(40 \mu \mathrm{A}\) in the base current changes the output current by $2 \mathrm{~mA}\( and \)0.04 \mathrm{~V}$ in input voltage. If a load of \(6 \mathrm{k} \Omega\) is used, then the voltage gain of the amplifier is (A) 100 (B) 200 (C) 300 (D) 400
A potential barrier of \(0.6 \mathrm{~V}\) exists across a P-N junction. If the depletion region is \(1 \mu \mathrm{m}\) wide, what is the intensity of electric field in the region? (A) \(4 \times 10^{5} \mathrm{Vm}^{-1}\) (B) \(5 \times 10^{5} \mathrm{Vm}^{-1}\) (C) \(6 \times 10^{5} \mathrm{Vm}^{-1}\) (D) \(2 \times 10^{5} \mathrm{Vm}^{-1}\)
Reverse bias applied on a junction diode: (A) raises the potential barrier (B) increases majority charge carrier current (C) lowers the potential barrier (D) increases the temperature of junction
What do you think about this solution?
We value your feedback to improve our textbook solutions.