Chapter 19: Problem 2638
The manifestation of band structure in solids is due to: (A) Heisenberg's uncertainty principle (B) Pauli's exclusion principle (C) Bohr's correspondence principle (D) Boltzmann's low
Chapter 19: Problem 2638
The manifestation of band structure in solids is due to: (A) Heisenberg's uncertainty principle (B) Pauli's exclusion principle (C) Bohr's correspondence principle (D) Boltzmann's low
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Get started for freeThe active junction area in a solar cell is as we want power (A) small, more (B) small, small (C) large, more (D) large, small
A n-p-n transistor is used in common emitter mode in an amplifier it. A change of \(40 \mu \mathrm{A}\) in the base current changes the output current by $2 \mathrm{~m} \mathrm{~A}\( and \)0.04 \mathrm{~V}$ in input voltage. The input resistance is (A) \(1 \mathrm{k} \Omega\) (B) \(10 \Omega\) (C) \(10 \mathrm{k} \Omega\) (D) \(100 \Omega\)
A n-p-n transistor is used in common emitter made in an amplifier it. A change of \(40 \mu \mathrm{A}\) in the base current changes the output current by $2 \mathrm{~mA}\( and \)0.04 \mathrm{~V}$ in input voltage. If a load of \(6 \mathrm{k} \Omega\) is used, then the voltage gain of the amplifier is (A) 100 (B) 200 (C) 300 (D) 400
Ripples are (A) A.C. mixed with D.C (B) D.C. mixed with output (C) D.C. output (D) A.C. output
The depletion layer in PN junction diode is caused by (A) drift of holes (B) Diffusion of impurity ions (C) diffusion of charge carriers (D) drift of electrons
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