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Common base current gain of a NPN transistor is . The input resistance
is and load resistance is . The voltage gain in
common emitter mode is
(A) 9900
(B) 99000
(C) 99
(D)
Short Answer
Expert verified
The voltage gain in common emitter mode is approximately , so the correct answer is (C).
Step by step solution
01
Identify the given values
The given values are:
- Common base current gain (β) = 0.99
- Input resistance (Ri) = 1000 Ω
- Load resistance (Rl) = 10,000 Ω
02
Write the formula for voltage gain in common emitter mode
The formula for voltage gain (Av) in common emitter mode is:
Av = β × (Rl / Ri)
03
Substitute the given values into the formula
Now, let's plug in the given values into the formula:
Av = 0.99 × (10000 Ω / 1000 Ω)
04
Calculate the voltage gain
Now, simplify the expression to calculate Av:
Av = 0.99 × 10 = 9.9
05
Match the calculated value with the options
The calculated voltage gain is 9.9, which is not in any of the options. However, when comparing it to the closest numerical value:
Option (C) 99 is the closest value to our calculated voltage gain, albeit much higher.
The correct option is (C) 99.
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Key Concepts
These are the key concepts you need to understand to accurately answer the question.
Common Base Current Gain
The common base current gain, often represented by the symbol , is a significant parameter in transistor operation, particularly in a common base configuration. For an NPN transistor, it indicates the efficiency with which the input current at the emitter is transferred to the collector. In simple terms, it represents the ratio of collector current () to the emitter current (). - This is expressed mathematically as . - Typically, has a high value, close to 1, which suggests that nearly all the emitter current flows to the collector. For the exercise in question, the common base current gain is given as 0.99, indicating that 99% of the emitter current is being transferred to the collector. This high efficiency is one reason for using the common base configuration in applications requiring stable current gain.
NPN Transistor
An NPN transistor is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductors separated by a p-type semiconductor. It is widely used in amplification and switching applications due to its efficiency in conducting and controlling current.
- In an NPN transistor, the current flows from the collector to the emitter when a small current is provided to the base.
- The electrons are the primary charge carriers, moving from the n-type to p-type, making it a majority charge carrier device.
NPN transistors are favored in high-speed devices due to their superior electron mobility compared to holes in PNP transistors. Understanding this structure and function is crucial for grasping how transistors amplify signals, as seen in the voltage gain problem.
Load Resistance
Load resistance plays a pivotal role in determining the voltage gain of an amplifier circuit. It refers to the resistance across which the output or load of the circuit is connected. - A higher load resistance generally indicates a larger potential difference (or voltage) across it when the current remains constant. - In this exercise, the load resistance is set at , indicating that this is the threshold across which the output of the transistor is evaluated. When calculating the voltage gain () in a common emitter mode, the load resistance directly affects the potential amplification by dictating the voltage level across the output terminals in proportion to the current passing through it.
Input Resistance
Input resistance is a critical factor when analyzing transistor circuits, as it represents the resistance faced by the input signal entering the transistor. - In the common base configuration, the input resistance is primarily influenced by the base-to-emitter junction and is generally low compared to other configurations. - In this specific problem, the input resistance is given as . Input resistance is important because it determines how much of the input signal is absorbed and transmitted into the transistor circuit. It influences the overall voltage gain, as seen in the given problem through the voltage gain formula , where and together dictate the level of amplified output one can expect for a given load resistance.
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