Chapter 19: Problem 2576
In Si-crystal, impurity donor atom have valency. (A) 2 (B) 3 (C) 4 (D) 5
Chapter 19: Problem 2576
In Si-crystal, impurity donor atom have valency. (A) 2 (B) 3 (C) 4 (D) 5
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Get started for freeIn a common emitter amplifier, output resistance is \(5000 \Omega\) and input resistance is \(1000 \Omega .\) If peak value of signal voltage is $1 \mathrm{mV}\( and \)\beta=100$, then the peak value of output voltage is (A) \(0.1 \mathrm{~V}\) (B) \(0.3 \mathrm{~V}\) (C) \(0.2 \mathrm{~V}\) (D) \(0.5 \mathrm{~V}\)
A n-p-n transistor is used in common emitter made in an amplifier it. A change of \(40 \mu \mathrm{A}\) in the base current changes the output current by $2 \mathrm{~mA}\( and \)0.04 \mathrm{~V}$ in input voltage. If a load of \(6 \mathrm{k} \Omega\) is used, then the voltage gain of the amplifier is (A) 100 (B) 200 (C) 300 (D) 400
A n-p-n transistor is used in common emitter mode in an amplifier it. A change of \(40 \mu \mathrm{A}\) in the base current changes the output current by $2 \mathrm{~m} \mathrm{~A}\( and \)0.04 \mathrm{~V}$ in input voltage. The input resistance is (A) \(1 \mathrm{k} \Omega\) (B) \(10 \Omega\) (C) \(10 \mathrm{k} \Omega\) (D) \(100 \Omega\)
What kind of device is a diode? (A) Bilateral (B) Linear (C) Nonlinear (D) Unipolar
A potential barrier of \(0.6 \mathrm{~V}\) exists across a P-N junction. If the depletion region is \(1 \mu \mathrm{m}\) wide, what is the intensity of electric field in the region? (A) \(4 \times 10^{5} \mathrm{Vm}^{-1}\) (B) \(5 \times 10^{5} \mathrm{Vm}^{-1}\) (C) \(6 \times 10^{5} \mathrm{Vm}^{-1}\) (D) \(2 \times 10^{5} \mathrm{Vm}^{-1}\)
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