Chapter 19: Problem 2568
Which of the following is not the advantage of PN junction diode over tube valve? (A) Unlimited life (B) No warming-up time after switching (C) Large efficiency (D) Low consumption of Power
Chapter 19: Problem 2568
Which of the following is not the advantage of PN junction diode over tube valve? (A) Unlimited life (B) No warming-up time after switching (C) Large efficiency (D) Low consumption of Power
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A n-p-n transistor is used in common emitter mode in an amplifier it. A change of \(40 \mu \mathrm{A}\) in the base current changes the output current by $2 \mathrm{~m} \mathrm{~A}\( and \)0.04 \mathrm{~V}$ in input voltage. The input resistance is (A) \(1 \mathrm{k} \Omega\) (B) \(10 \Omega\) (C) \(10 \mathrm{k} \Omega\) (D) \(100 \Omega\)
How many NAND gates are used to form AND gate? (A) 1 (B) 2 (C) 3 (D) 4
In Si-crystal, impurity donor atom have valency. (A) 2 (B) 3 (C) 4 (D) 5
Ionization energy of isolated phosphorous atom \(10 \mathrm{eV}\). Ionization energy of same atom in Si is nearly \(\mathrm{eV}\) (Relative Permittivity of silicon \(=12\) ) (A) \(0.1\) (B) \(0.2\) (C) \(0.3\) (D) \(0.4\)
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