Question

For each of the following pairs of semiconductors, which one will have the larger band gap: (a) InP or InAs, (b) Ge or AIP, (c) AgI or CdTe?

Short answer

The semiconductors with larger band gaps are: (a) InP with a band gap of approximately 1.35 eV, (b) AlP with a band gap of approximately 2.45 eV, and (c) AgI with a band gap of approximately 3.10 eV.

Step-by-step solution

(a) Comparing InP and InAs

Let's start by finding the band gap values for both InP and InAs from a reference source. - For InP, the band gap is approximately 1.35 eV at room temperature. - For InAs, the band gap is approximately 0.36 eV at room temperature. Comparing the band gap values, InP has the larger band gap.

(b) Comparing Ge and AlP

Next, let's compare the band gap values for Ge and AlP. - For Ge, the band gap is approximately 0.66 eV at room temperature. - For AlP, the band gap is approximately 2.45 eV at room temperature. Comparing the band gap values, AlP has the larger band gap.

(c) Comparing AgI and CdTe

Finally, let's compare the band gap values for AgI and CdTe. - For AgI, the band gap is approximately 3.10 eV at room temperature. - For CdTe, the band gap is approximately 1.50 eV at room temperature. Comparing the band gap values, AgI has the larger band gap.

Key concepts

Understanding Semiconductor Band Gap Values

The band gap of a semiconductor is a fundamental property that determines its electrical and optical characteristics. It is the energy difference between the top of the valence band and the bottom of the conduction band. Electrons must acquire energy at least equal to the band gap in order to jump from the valence to the conduction band and contribute to electrical conductivity.

Materials with larger band gaps are less conductive but can be excellent insulators, making them useful in various applications such as electronic devices and solar cells. On the other hand, semiconductors with smaller band gaps can conduct electricity more readily when a small amount of energy is supplied. Thus, knowing the exact band gap values of semiconductors can aid in selecting appropriate materials for specific electronic applications.

Comparing InP and InAs

When comparing semiconductors, such as Indium Phosphide (InP) and Indium Arsenide (InAs), their different band gap values offer insights into their performance in various electronic components. With a band gap of approximately 1.35 eV at room temperature, InP is larger than that of InAs, which has a band gap of approximately 0.36 eV.

Due to its wider band gap, InP can operate at higher frequencies and is often used in high-speed electronics and optoelectronics, such as lasers and detectors for fiber-optic communication systems. In contrast, InAs, with its narrower band gap, is more sensitive to infrared light and is typically utilized in infrared detectors and imaging systems.

Ge vs. AlP

Germanium (Ge) and Aluminum Phosphide (AlP) present a stark contrast in band gap values, influencing their adoption in different technologies. Ge has a band gap of approximately 0.66 eV, which is suitable for applications like infrared detectors and solar cells.

However, the larger band gap of AlP, about 2.45 eV, makes it attractive for uses requiring high thermal stability and resistance to electrical breakdown. Devices such as light-emitting diodes (LEDs) and other optoelectronic components that demand wide band gap materials often incorporate AlP due to these properties.

AgI vs. CdTe

Silver Iodide (AgI) and Cadmium Telluride (CdTe) are two semiconductors that are highly useful in niche applications due to their distinct band gap values. AgI has a relatively large band gap of approximately 3.10 eV, positioning it for specialized roles such as in photographic materials and cloud seeding. Its high band gap means it is less responsive to visible light but more suitable for ultraviolet light applications.

Conversely, CdTe, with a band gap of about 1.50 eV, is perfectly matched to the solar spectrum for photovoltaic applications. This makes it one of the ideal materials for thin-film solar panels. The comparison between their band gap values reflects the trade-off between electrical conductivity and the ability to harness light energy, determining their suitability for different types of optical and electronic devices.