Question

If you want to dope GaAs to make a p-type semiconductor with an element to replace As, which element(s) would you pick?

Short answer

To dope GaAs and create a p-type semiconductor by replacing As, suitable dopant elements would be silicon (Si) and germanium (Ge). These elements have one fewer valence electron (4 valence electrons) than As, leading to the formation of holes in the crystal lattice that increase electrical conductivity. Both Si and Ge are compatible with GaAs and, since they have low ionization energy and small atomic size, they cause minimal lattice distortion and result in better p-type characteristics.

Step-by-step solution

Understanding p-type Semiconductors

P-type semiconductors are created by introducing impurities or dopants that have an excess of valence electrons, resulting in the formation of holes (positive charges) in the crystal lattice. These holes can freely move in the lattice, resulting in an increased electrical conductivity. The impurity atoms used for doping p-type semiconductors typically have one fewer valence electron than the replaced atoms in the crystal lattice.

Examining the GaAs Crystal Lattice

GaAs is a III-V semiconductor, which means it consists of elements from groups III and V of the periodic table. Specifically, gallium (Ga) is from group III (with 3 valence electrons), and arsenic (As) is from group V (with 5 valence electrons). The GaAs crystal lattice has a stable covalent bond formed by sharing electrons between Ga and As atoms.

Identifying Possible Dopant Elements

We want to find an element to replace As in GaAs to create a p-type semiconductor. This means the dopant element should have one fewer valence electron than As (i.e., 4 valence electrons). Group IV elements in the periodic table have 4 valence electrons, making them suitable candidates for p-type dopants in GaAs. These include carbon (C), silicon (Si), germanium (Ge), tin (Sn), and lead (Pb).

Evaluating the Suitable Dopant(s)

When choosing a suitable dopant for a semiconductor, it is essential to consider the dopant's compatibility with the host material (GaAs in this case) and the dopant's ionization energy. Typically, dopants with low ionization energy and small atomic size are preferred because they lead to better p-type characteristics and lower lattice distortion. Considering the previously mentioned candidates, silicon (Si) and germanium (Ge) are the most appropriate choices to dope GaAs to create a p-type semiconductor. Both Si and Ge are from the same group as As and have similar atomic radii, which minimize lattice distortion and create suitable carrier concentrations.