Question

The valence band of a semiconductor is made up of bonding molecular orbitals and the conduction band of antibonding molecular orbitals. (a) Given this fact would you expect n-type doping to strengthen or weaken the bonds in a semiconductor? (b) Would you expect p-type doping to strengthen or weaken the bonds in a semiconductor?

Short answer

(a) N-type doping would weaken the bonds in a semiconductor, as it increases the number of electrons in the anti-bonding conduction band. (b) P-type doping would strengthen the bonds in a semiconductor, as it creates "holes" in the bonding valence band, allowing electrons from neighboring atoms to occupy these holes and form new bonds.

Step-by-step solution

Understanding Valence and Conduction Bands

In a semiconductor, the valence band is the range of energy levels that electrons can occupy when bonding with other atoms. The conduction band, on the other hand, is the range of energy levels where electrons can move freely through the material, allowing electrical conductivity. These bands are separated by an energy gap called the bandgap.

Understanding N-Type and P-Type Doping

To improve the electrical conductivity of semiconductors, impurity atoms are added into the material through a process called doping. There are two types of doping: 1. N-Type Doping: The semiconductor material is doped with atoms that have an extra electron, called donor atoms (usually a group V element, like phosphorus). This type of doping increases the number of free electrons available for conduction. 2. P-Type Doping: The semiconductor material is doped with atoms that have one less electron than the semiconductor's atoms, called acceptor atoms (usually a group III element, like boron). This type of doping creates "holes" in the valence band that can be occupied by other electrons, effectively increasing the number of charge carriers.

Effect of N-Type Doping on Bonds

N-type doping involves adding donor atoms with extra electrons to the semiconductor material. These extra electrons occupy the conduction band, which consists of anti-bonding molecular orbitals. As the number of electrons in the conduction (antibonding) band increases, the antibonding character of the material increases, which effectively weakens the bonds in the semiconductor. So, the answer to part (a) is that n-type doping would weaken the bonds in a semiconductor.

Effect of P-Type Doping on Bonds

P-type doping involves adding acceptor atoms with fewer electrons than the semiconductor's atoms to the material. This creates "holes" in the valence band, which consists of bonding molecular orbitals. Electrons from neighboring atoms can occupy these holes to form new bonds, effectively strengthening the bonding character of the material. So, the answer to part (b) is that p-type doping would strengthen the bonds in a semiconductor.

Key concepts

Valence Band

In semiconductors, the valence band is a crucial concept to understand. It represents the energy levels where electrons are primarily involved in bonding with neighboring atoms.
Electrons in this band have lower energy and are not free to move, making the material a poor conductor at this stage. This band is mainly composed of bonding molecular orbitals, which help hold the atoms together. An important characteristic of the valence band is how it interacts with the concept of 'holes'. When an electron leaves the valence band and moves to a higher energy level, it leaves behind a 'hole'. This hole can be considered a positive charge, as it allows other electrons to move in to fill the gap. Thus, even the movement of holes can contribute to electrical conduction in certain cases.
Understanding these dynamics is key to grasping how doping affects the behavior of semiconductors.

Conduction Band

The conduction band is where semiconductors show their unique properties. It contains energy levels higher than those of the valence band. Electrons in the conduction band are free to move throughout the material, enabling electrical conductivity.
This band is composed mainly of anti-bonding molecular orbitals. These orbitals do not contribute to bonding. In fact, when electrons occupy these orbitals, they can weaken or disrupt the existing bonds between atoms. The energy gap between the valence band and the conduction band—known as the bandgap—determines how easily electrons can be excited into the conduction band.
Whether or not they can make this jump is significant for the material's conductive properties. In pure semiconductors, the bandgap can be overcome by thermal energy, but doping can make the movement of electrons into the conduction band much easier, enhancing conductivity.

Doping

Doping is a process that enhances the electrical conductivity of semiconductors by introducing impurities. This is achieved by adding atoms with more or fewer electrons than the semiconductor itself.

• N-Type Doping: This involves adding donor atoms, often from group V of the periodic table, like phosphorus. These atoms have one more electron than the semiconductor's atoms, providing extra electrons that can move into the conduction band, making the material more conductive. However, because these electrons occupy the anti-bonding conduction band, they can weaken the internal bond structure.


• P-Type Doping: Here, acceptor atoms from group III, like boron, are used. These have one less electron, creating holes in the valence band. These holes can "accept" electrons from neighboring atoms, effectively allowing new bonds to form and thus strengthen the overall bonding framework of the semiconductor.

Both types of doping are essential when tailoring semiconductors for particular applications in electronics, like transistors and diodes. By carefully selecting doping elements, engineers can control the electrical properties and optimize the material for specific functions.