Chapter 20: Problem 117
Indium(III) phosphide is a semiconducting material that has been frequently used in lasers, light-emitting diodes (LED), and fiber-optic devices. This material can be synthesized at \(900 . \mathrm{K}\) according to the following reaction: $$ \operatorname{In}\left(\mathrm{CH}_{3}\right)_{3}(g)+\mathrm{PH}_{3}(g) \longrightarrow \operatorname{InP}(s)+3 \mathrm{CH}_{4}(g) $$ a. If 2.56 \(\mathrm{L} \operatorname{In}\left(\mathrm{CH}_{3}\right)_{3}\) at 2.00 \(\mathrm{atm}\) is allowed to react with 1.38 \(\mathrm{L} \mathrm{PH}_{3}\) at \(3.00 \mathrm{atm},\) what mass of InP(s) will be produced assuming the reaction has an 87\(\%\) yield? b. When an electric current is passed through an optoelectronic device containing InP, the light emitted has an energy of \(2.03 \times 10^{-19} \mathrm{J}\) . What is the wavelength of this light and is it visible to the human eye? c. The semiconducting properties of InP can be altered by doping. If a small number of phosphorus atoms are replaced by atoms with an electron configuration of \([\mathrm{Kr}] 5 s^{2} 4 d^{10} 5 p^{4},\) is this n-type or p-type doping?
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